集束イオンビーム装置および収差補正集束イオンビーム装置

Focused ion beam device and aberration corrected focused ion beam device

Abstract

PROBLEM TO BE SOLVED: To provide a focused ion beam device making the best use of a lens optical system of an acceleration type object lens without sacrificing the life of the device. SOLUTION: The focused ion beam device is composed of a draw-out electrode 20 for drawing out charged particles from an ion source 10 as ion beams; a focusing lens 30 controlling an opening angle of the drawn-out ion beams; a current limiting diaphragm 50 taking out ion beams having a specified irradiation angle from the above ion beams with the controlled opening angle; an electrostatic opening angle controlling lens 60 capable of controlling opening angles of the ion beams passing through the current limiting diaphragm without changing current amounts of the ion beams; an electrostatic object lens 80 converging on a sample the ion beams, of which the opening angle is controlled by the electrostatic opening angle controlling lens; and a control means 101 controlling the electrostatic opening angle controlling lens with a polarity decelerating the charged particles and controlling the electrostatic object lens with a polarity accelerating the charged particles. COPYRIGHT: (C)2006,JPO&NCIPI
【課題】 装置寿命を犠牲にせず、加速型対物レンズのレンズ光学系の利点を活かす。 【解決手段】 イオン源10からの荷電粒子をイオンビームとして引き出すための引き出し電極20と、引き出されたイオンビームの開き角を制御する集束レンズ30と、開き角が制御された前記イオンビームから特定の放射角を持つイオンビームを取り出す電流制限絞り50と、前記電流制限絞りを通過した前記イオンビームの電流量を変えずに開き角の制御が可能に構成された静電型開き角制御レンズ60と、静電型開き角制御レンズで開き角が制御されたイオンビームを試料上に集束させる静電型対物レンズ80と、静電型開き角制御レンズでは前記荷電粒子を減速する極性で制御すると共に、静電型対物レンズでは前記荷電粒子を加速する極性で制御する制御手段101とを有する。 【選択図】 図1

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    JP-2007287495-ANovember 01, 2007Jeol Ltd, 日本電子株式会社2-lens optical system scanning type aberration corrected focused ion beam device, 3-lens optical system scanning type aberration corrected focused ion beam device, and 2-lens optical system projection type aberration corrected ion lithography device as well as 3-lens optical system projection type aberration corrected ion lithography device
    JP-2008153209-AJuly 03, 2008Hitachi High-Technologies Corp, 株式会社日立ハイテクノロジーズCharged particle beam orbit correcting unit and charged particle beam apparatus
    JP-2009140925-AJune 25, 2009Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh, アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハーHigh resolution gas field ion column reducing load to test piece
    US-8644637-B2February 04, 2014Canon Kabushiki KaishaImage processing method
    US-8735847-B2May 27, 2014ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbHHigh resolution gas field ion column with reduced sample load
    WO-2011111852-A1September 15, 2011Canon Kabushiki KaishaImage processing method